Qualcomm has announced its next flagship SoC for Android will be
called Snapdragon 835, which is based on the Samsung's 10nm FinFET
process.
Samsung’s
new 10nm FinFET process can handle up to a 30 percent increase in area
efficiency with a 27 percent improvement in performance or up to 40 percent
less power consumption compared to the previous version. These process
improvements, combined with a more advanced chip design, can create significant
battery life enhancements.
Keith
Kressin, senior vice president, product management, Qualcomm Technologies. Inc,
said
"We are excited to continue working together with Samsung in developing products that lead the mobile industry. Using the new 10nm process node is expected to allow our premium tier Snapdragon 835 processor to deliver greater power efficiency and increase performance while also allowing us to add a number of new capabilities that can improve the user experience of tomorrow’s mobile devices."
|
| Quick Charge 4.0 |
Qualcom also announced the new Qualcomm Quick Charge 4.0 technology along with Snapdragon
835 SoC, which is 20 percent faster and 30 percent more efficient
than the
Quick Charge 3.0.
The company suggests that a five-minute charge will be enough to give users 4-5 hours of life, and that a typical device's
battery could charge up to 50 percent in 15 minutes.
Quick Charge 4.0 also support Dual-Charge.It uses
the Intelligent Negotiation for Optimum Voltage (INOV) technology. And it
more battery saver.
We
can expect the devices that comes with new Snapdragon 835 SoC and Quick Charge
4.0 in the market by 2017.


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